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| BF245 | Go-WWW |
| 2N3819 - N-channel JFET (soon to be obsolete), small signal, 25V 10mA 350 mW 400 MHz TO-92 | Go-WWW | |
| How a field effect transistor works | Go-WWW | |
| Paralleling of Power MOSFETs | Go-WWW | |
| PUT Complimentary Feedback Pair | Go-WWW | |
| BS170 N-Channel enhancement mode field effect transistor for low voltage, low current applications (up to 500 mA) | Go-WWW | |
| Power MOSFET Basics | Go-WWW | |
| Measuring HEXFET® Characteristics | Go-WWW | |
| A simple guide to selecting power MOSFETs | Go-WWW | |
| Power Mosfet Basics | Go-WWW | |
| IC maintains uniform bias for GaAs MESFETs | Go-WWW | |
| Protecting IGBTs and MOSFETs from ESD | Go-WWW | |
| 2N4871 UJT / Unijunction Transistor | Go-WWW | |
| RF FET Small Signal Transistors | Go-WWW | |
| MOSFETs and IGBTs differ in drive methods and protection needs | Go-WWW | |
| BF245A - N-channel symmetrical junction field-effect transistor 700 MHz, interchangeability of drain and source connections, suitable for LF, HF and DC amplifiers, TO-92 variant package | Go-WWW | |
| Simple and inexpenesive methods to generate isolated gate drive supplies | Go-WWW | |
| IGBT Characteristics | Go-WWW | |
| Transformer-Isolated Gate Driver Provides very large duty cycle ratios | Go-WWW | |
| The Do's and Dont's of Using MOS-Gated Transistors | Go-WWW | |
| Foolin' with FETs | Go-WWW | |
| Gate Drive Techniques For Large IGBT Modules | Go-WWW | |
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